The diffusion process in a transistor is simulated by two partial differential equations: Laplace's and Poisson's. The proposed solution consists in an iterative scheme for a determination of the interface between these two equations.The first one consists in the use of an adjoint potential for the reduction of the domain to the boundary integral. The second method consists in a an analytical reduction of the domain integral and a numerical evaluation of the boundary integral using Simpson's rule and Gauss quadrature scheme. The two methods are applied to a free boundary value problem : A Junction Gate Field Effect Transistor. The results obtained are analysed and compared.
Kassem, M., & SoLiman, H. (1991). DIFFUSION PROCESS IN A TRANSISTOR USING THE BOUNDARY ELEMENT METHOD. International Conference on Aerospace Sciences and Aviation Technology, 4(ASAT CONFLENCE 14-16 May 1991 , CAIRO), 515-525. doi: 10.21608/asat.1991.25834
MLA
M. Kassem; H. SoLiman. "DIFFUSION PROCESS IN A TRANSISTOR USING THE BOUNDARY ELEMENT METHOD", International Conference on Aerospace Sciences and Aviation Technology, 4, ASAT CONFLENCE 14-16 May 1991 , CAIRO, 1991, 515-525. doi: 10.21608/asat.1991.25834
HARVARD
Kassem, M., SoLiman, H. (1991). 'DIFFUSION PROCESS IN A TRANSISTOR USING THE BOUNDARY ELEMENT METHOD', International Conference on Aerospace Sciences and Aviation Technology, 4(ASAT CONFLENCE 14-16 May 1991 , CAIRO), pp. 515-525. doi: 10.21608/asat.1991.25834
VANCOUVER
Kassem, M., SoLiman, H. DIFFUSION PROCESS IN A TRANSISTOR USING THE BOUNDARY ELEMENT METHOD. International Conference on Aerospace Sciences and Aviation Technology, 1991; 4(ASAT CONFLENCE 14-16 May 1991 , CAIRO): 515-525. doi: 10.21608/asat.1991.25834
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